Th4Si7
传统材料 TRAMP-ID: mp-3271776 · 空间群: Cmcm (#63)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 12.55 | 7.0512 | 1.2 | (1,0,-1,0) |
| 21.36 | 4.1604 | 34.8 | (0,0,0,2) |
| 25.13 | 3.5434 | 31.9 | (2,-2,0,0) |
| 25.26 | 3.5256 | 63.1 | (2,0,-2,0) |
| 33.21 | 2.6976 | 50.6 | (2,-2,0,2) |
| 33.31 | 2.6897 | 100.0 | (2,0,-2,2) |
| 43.50 | 2.0802 | 14.6 | (0,0,0,4) |
| 44.35 | 2.0423 | 27.5 | (4,-2,-2,0) |
| 44.59 | 2.0321 | 13.4 | (2,2,-4,0) |
| 49.73 | 1.8334 | 16.6 | (4,-2,-2,2) |
| 49.95 | 1.8260 | 8.1 | (2,2,-4,2) |
| 50.90 | 1.7939 | 10.0 | (2,-2,0,4) |
| 50.97 | 1.7916 | 20.0 | (2,0,-2,4) |
| 51.59 | 1.7717 | 4.9 | (4,-4,0,0) |
| 51.87 | 1.7628 | 9.4 | (4,0,-4,0) |
| 56.45 | 1.6300 | 11.3 | (4,-4,0,2) |
| 56.71 | 1.6231 | 22.2 | (4,0,-4,2) |
| 63.87 | 1.4574 | 18.9 | (4,-2,-2,4) |
| 64.06 | 1.4536 | 9.3 | (2,2,-4,4) |
| 67.54 | 1.3868 | 1.7 | (0,0,0,6) |
| 69.72 | 1.3488 | 4.0 | (4,-4,0,4) |
| 69.95 | 1.3449 | 7.9 | (4,0,-4,4) |
| 70.35 | 1.3383 | 3.9 | (6,-4,-2,0) |
| 70.52 | 1.3354 | 3.9 | (6,-2,-4,0) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Th4Si7 were obtained from the Materials Project database (MP-ID: mp-3271776, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Th4Si7
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 8.16946726
_cell_length_b 8.16946743
_cell_length_c 8.32085775
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.33122849
_symmetry_Int_Tables_number 1
_chemical_formula_structural Th4Si7
_chemical_formula_sum 'Th8 Si14'
_cell_volume 479.32157632
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Th Th0 1 0.25643928 0.25643928 0.00000000 1.0
Th Th1 1 0.74356072 0.74356072 0.00000000 1.0
Th Th2 1 0.74356072 0.74356072 0.50000000 1.0
Th Th3 1 0.25643928 0.25643928 0.50000000 1.0
Th Th4 1 0.25156743 0.74843257 0.49859468 1.0
Th Th5 1 0.74843257 0.25156743 0.50140532 1.0
Th Th6 1 0.74843257 0.25156743 0.99859468 1.0
Th Th7 1 0.25156743 0.74843257 0.00140532 1.0
Si Si8 1 0.07499108 0.40008155 0.25000000 1.0
Si Si9 1 0.92500892 0.59991845 0.75000000 1.0
Si Si10 1 0.58192132 0.41807868 0.25000000 1.0
Si Si11 1 0.41807868 0.58192132 0.75000000 1.0
Si Si12 1 0.41441499 0.58558501 0.25000000 1.0
Si Si13 1 0.58558501 0.41441499 0.75000000 1.0
Si Si14 1 0.07871949 0.92128051 0.25000000 1.0
Si Si15 1 0.92128051 0.07871949 0.75000000 1.0
Si Si16 1 0.59991845 0.92500892 0.25000000 1.0
Si Si17 1 0.40008155 0.07499108 0.75000000 1.0
Si Si18 1 0.91718393 0.58044688 0.25000000 1.0
Si Si19 1 0.08281607 0.41955312 0.75000000 1.0
Si Si20 1 0.41955312 0.08281607 0.25000000 1.0
Si Si21 1 0.58044688 0.91718393 0.75000000 1.0
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