Th2Ga9Ir2Os
高熵材料 HEAMP-ID: mp-3275704 · 空间群: C2/m (#12)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 13.36 | 6.6286 | 2.5 | (1,0,-1,0) |
| 13.38 | 6.6155 | 4.4 | (1,-1,0,0) |
| 16.29 | 5.4405 | 3.1 | (1,0,-1,-1) |
| 16.33 | 5.4273 | 3.4 | (1,0,-1,1) |
| 18.70 | 4.7440 | 5.4 | (0,0,0,2) |
| 23.07 | 3.8552 | 2.1 | (1,-1,0,2) |
| 23.23 | 3.8296 | 4.8 | (1,1,-2,0) |
| 23.27 | 3.8220 | 10.2 | (2,-1,-1,0) |
| 25.05 | 3.5549 | 5.4 | (1,1,-2,-1) |
| 25.10 | 3.5476 | 5.0 | (1,1,-2,1) |
| 25.11 | 3.5470 | 11.1 | (2,-1,-1,-1) |
| 25.13 | 3.5433 | 12.2 | (2,-1,-1,1) |
| 26.90 | 3.3143 | 2.2 | (2,0,-2,0) |
| 26.96 | 3.3078 | 4.8 | (2,-2,0,0) |
| 28.50 | 3.1314 | 6.5 | (2,0,-2,-1) |
| 28.55 | 3.1264 | 6.2 | (2,0,-2,1) |
| 29.94 | 2.9842 | 17.2 | (1,1,-2,-2) |
| 30.00 | 2.9784 | 35.9 | (2,-1,-1,-2) |
| 30.03 | 2.9755 | 18.9 | (1,1,-2,2) |
| 30.05 | 2.9741 | 32.8 | (2,-1,-1,2) |
| 31.31 | 2.8573 | 1.4 | (1,0,-1,-3) |
| 31.37 | 2.8516 | 1.5 | (1,0,-1,3) |
| 32.93 | 2.7202 | 2.3 | (2,0,-2,-2) |
| 33.01 | 2.7137 | 2.3 | (2,0,-2,2) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Th2Ga9Ir2Os were obtained from the Materials Project database (MP-ID: mp-3275704, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Th2Ga9Ir2Os
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 7.64398672
_cell_length_b 7.64398689
_cell_length_c 9.48811488
_cell_angle_alpha 90.08562835
_cell_angle_beta 90.08562576
_cell_angle_gamma 119.86843069
_symmetry_Int_Tables_number 1
_chemical_formula_structural Th2Ga9Ir2Os
_chemical_formula_sum 'Th4 Ga18 Ir4 Os2'
_cell_volume 480.75382169
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Th Th0 1 0.99629696 0.66708222 0.24810652 1.0
Th Th1 1 0.00370304 0.33291778 0.75189348 1.0
Th Th2 1 0.66708222 0.99629696 0.24810652 1.0
Th Th3 1 0.33291778 0.00370304 0.75189348 1.0
Ga Ga4 1 0.13364863 0.13364863 0.25024613 1.0
Ga Ga5 1 0.86635137 0.86635137 0.74975387 1.0
Ga Ga6 1 0.00573815 0.33466926 0.07706551 1.0
Ga Ga7 1 0.99426185 0.66533074 0.92293449 1.0
Ga Ga8 1 0.99458442 0.66608816 0.57771913 1.0
Ga Ga9 1 0.33391184 0.00541558 0.42228087 1.0
Ga Ga10 1 0.00541558 0.33391184 0.42228087 1.0
Ga Ga11 1 0.66608816 0.99458442 0.57771913 1.0
Ga Ga12 1 0.66533074 0.99426185 0.92293449 1.0
Ga Ga13 1 0.33466926 0.00573815 0.07706551 1.0
Ga Ga14 1 0.33857217 0.33857217 0.56339602 1.0
Ga Ga15 1 0.66142783 0.66142783 0.43660398 1.0
Ga Ga16 1 0.65967767 0.65967767 0.05896121 1.0
Ga Ga17 1 0.34032233 0.34032233 0.94103879 1.0
Ga Ga18 1 0.33811076 0.54130440 0.24906581 1.0
Ga Ga19 1 0.66188924 0.45869560 0.75093419 1.0
Ga Ga20 1 0.54130440 0.33811076 0.24906581 1.0
Ga Ga21 1 0.45869560 0.66188924 0.75093419 1.0
Ir Ir22 1 0.32785258 0.67214742 0.50000000 1.0
Ir Ir23 1 0.67214742 0.32785258 0.50000000 1.0
Ir Ir24 1 0.00000000 0.00000000 0.00000000 1.0
Ir Ir25 1 0.00000000 0.00000000 0.50000000 1.0
Os Os26 1 0.67347224 0.32652776 0.00000000 1.0
Os Os27 1 0.32652776 0.67347224 1.00000000 1.0
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