HoTh7(Si3Os)4
高熵材料 HEAMP-ID: mp-3283530 · 空间群: P6/mmm (#191)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 12.39 | 7.1456 | 12.7 | (1,0,-1,0) |
| 21.33 | 4.1650 | 3.5 | (0,0,0,2) |
| 21.54 | 4.1255 | 8.9 | (2,-1,-1,0) |
| 24.74 | 3.5984 | 2.5 | (1,0,-1,2) |
| 24.92 | 3.5728 | 26.9 | (2,0,-2,0) |
| 30.50 | 2.9310 | 11.3 | (2,-1,-1,2) |
| 33.03 | 2.7118 | 100.0 | (2,0,-2,2) |
| 33.17 | 2.7008 | 2.8 | (3,-1,-2,0) |
| 37.77 | 2.3819 | 1.5 | (3,0,-3,0) |
| 43.45 | 2.0825 | 12.1 | (0,0,0,4) |
| 43.78 | 2.0676 | 4.3 | (3,0,-3,2) |
| 43.89 | 2.0628 | 23.5 | (2,2,-4,0) |
| 43.89 | 2.0628 | 11.8 | (4,-2,-2,0) |
| 45.36 | 1.9993 | 1.1 | (1,0,-1,4) |
| 49.00 | 1.8591 | 2.1 | (2,-1,-1,4) |
| 49.30 | 1.8485 | 2.8 | (4,-2,-2,2) |
| 50.74 | 1.7992 | 8.4 | (2,0,-2,4) |
| 51.13 | 1.7864 | 1.4 | (0,4,-4,0) |
| 51.13 | 1.7864 | 2.7 | (4,0,-4,0) |
| 55.74 | 1.6492 | 1.3 | (3,-1,-2,4) |
| 56.01 | 1.6418 | 15.2 | (4,0,-4,2) |
| 56.01 | 1.6418 | 7.6 | (4,-4,0,2) |
| 58.91 | 1.5678 | 1.2 | (3,0,-3,4) |
| 59.26 | 1.5593 | 1.0 | (5,-1,-4,0) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of HoTh7(Si3Os)4 were obtained from the Materials Project database (MP-ID: mp-3283530, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_HoTh7(Si3Os)4
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 8.25105357
_cell_length_b 8.25105408
_cell_length_c 8.32997627
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99999401
_symmetry_Int_Tables_number 1
_chemical_formula_structural HoTh7(Si3Os)4
_chemical_formula_sum 'Ho1 Th7 Si12 Os4'
_cell_volume 491.12638030
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ho Ho0 1 0.00000000 0.00000000 0.75000000 1.0
Th Th1 1 0.50006497 0.00012795 0.25000000 1.0
Th Th2 1 0.49993653 0.99987507 0.75000000 1.0
Th Th3 1 0.99987205 0.49993503 0.25000000 1.0
Th Th4 1 0.00012493 0.50006347 0.75000000 1.0
Th Th5 1 0.50006497 0.49993503 0.25000000 1.0
Th Th6 1 0.49993653 0.50006347 0.75000000 1.0
Th Th7 1 0.00000000 0.00000000 0.25000000 1.0
Si Si8 1 0.16560977 0.33121755 0.99887516 1.0
Si Si9 1 0.83439489 0.66879079 0.99864532 1.0
Si Si10 1 0.66878245 0.83439023 0.99887516 1.0
Si Si11 1 0.83439489 0.66879079 0.50135468 1.0
Si Si12 1 0.33120921 0.16560511 0.99864532 1.0
Si Si13 1 0.16560977 0.33121755 0.50112484 1.0
Si Si14 1 0.16560977 0.83439023 0.99887516 1.0
Si Si15 1 0.33120921 0.16560511 0.50135468 1.0
Si Si16 1 0.83439489 0.16560511 0.99864532 1.0
Si Si17 1 0.66878245 0.83439023 0.50112484 1.0
Si Si18 1 0.83439489 0.16560511 0.50135468 1.0
Si Si19 1 0.16560977 0.83439023 0.50112484 1.0
Os Os20 1 0.33333300 0.66666700 0.99715905 1.0
Os Os21 1 0.66666700 0.33333300 0.99703519 1.0
Os Os22 1 0.66666700 0.33333300 0.50296481 1.0
Os Os23 1 0.33333300 0.66666700 0.50284095 1.0
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