Ti10GaSiSn6
高熵材料 HEAMP-ID: mp-3301076 · 空间群: P-31m (#162)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 12.44 | 7.1159 | 2.8 | (1,0,-1,0) |
| 20.34 | 4.3661 | 1.4 | (1,0,-1,1) |
| 21.63 | 4.1084 | 8.2 | (2,-1,-1,0) |
| 25.03 | 3.5580 | 19.4 | (2,0,-2,0) |
| 27.04 | 3.2977 | 57.6 | (2,-1,-1,1) |
| 29.86 | 2.9920 | 1.2 | (2,0,-2,1) |
| 32.38 | 2.7646 | 27.7 | (0,0,0,2) |
| 33.31 | 2.6896 | 2.9 | (3,-1,-2,0) |
| 34.81 | 2.5769 | 1.0 | (1,0,-1,2) |
| 37.17 | 2.4186 | 99.0 | (3,-1,-2,1) |
| 37.93 | 2.3720 | 28.1 | (0,3,-3,0) |
| 37.93 | 2.3720 | 56.3 | (3,0,-3,0) |
| 39.28 | 2.2936 | 100.0 | (2,-1,-1,2) |
| 41.36 | 2.1830 | 9.8 | (2,0,-2,2) |
| 45.99 | 1.9736 | 4.4 | (4,-1,-3,0) |
| 47.14 | 1.9278 | 1.9 | (3,-1,-2,2) |
| 47.20 | 1.9256 | 4.0 | (2,-4,2,1) |
| 47.20 | 1.9256 | 8.1 | (4,-2,-2,1) |
| 49.01 | 1.8587 | 33.3 | (4,-3,-1,1) |
| 49.01 | 1.8587 | 16.7 | (4,-1,-3,1) |
| 50.71 | 1.8002 | 6.4 | (3,-3,0,2) |
| 50.71 | 1.8002 | 3.2 | (3,0,-3,2) |
| 54.57 | 1.6816 | 9.8 | (2,-1,-1,3) |
| 55.75 | 1.6489 | 5.6 | (2,-4,2,2) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ti10GaSiSn6 were obtained from the Materials Project database (MP-ID: mp-3301076, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Ti10GaSiSn6
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 8.21677458
_cell_length_b 8.21677565
_cell_length_c 5.52916906
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00000364
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ti10GaSiSn6
_chemical_formula_sum 'Ti10 Ga1 Si1 Sn6'
_cell_volume 323.29075564
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ti Ti0 1 0.73709124 0.73709124 0.75601745 1.0
Ti Ti1 1 0.26290876 1.00000000 0.75601745 1.0
Ti Ti2 1 0.00000000 0.26290876 0.75601745 1.0
Ti Ti3 1 0.26290876 0.26290876 0.24398255 1.0
Ti Ti4 1 0.73709124 0.00000000 0.24398255 1.0
Ti Ti5 1 1.00000000 0.73709124 0.24398255 1.0
Ti Ti6 1 0.66666700 0.33333300 0.00000000 1.0
Ti Ti7 1 0.33333300 0.66666700 0.00000000 1.0
Ti Ti8 1 0.33333300 0.66666700 0.50000000 1.0
Ti Ti9 1 0.66666700 0.33333300 0.50000000 1.0
Ga Ga10 1 0.00000000 0.00000000 0.50000000 1.0
Si Si11 1 0.00000000 0.00000000 0.00000000 1.0
Sn Sn12 1 0.39118659 0.39118659 0.74709256 1.0
Sn Sn13 1 0.60881341 1.00000000 0.74709256 1.0
Sn Sn14 1 0.00000000 0.60881341 0.74709256 1.0
Sn Sn15 1 0.60881341 0.60881341 0.25290744 1.0
Sn Sn16 1 0.39118659 0.00000000 0.25290744 1.0
Sn Sn17 1 1.00000000 0.39118659 0.25290744 1.0
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