Th5SiSnBi2
高熵材料 HEAMP-ID: mp-3307238 · 空间群: Amm2 (#38)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 10.59 | 8.3522 | 7.5 | (1,0,-1,0) |
| 13.45 | 6.5828 | 1.2 | (0,0,0,1) |
| 21.27 | 4.1781 | 1.2 | (2,-2,0,0) |
| 21.28 | 4.1761 | 5.6 | (2,0,-2,0) |
| 22.86 | 3.8909 | 1.4 | (2,-1,-1,1) |
| 22.86 | 3.8897 | 1.2 | (1,1,-2,1) |
| 25.26 | 3.5263 | 1.2 | (2,0,-2,1) |
| 27.09 | 3.2914 | 23.0 | (0,0,0,2) |
| 28.26 | 3.1581 | 8.6 | (2,-3,1,0) |
| 28.26 | 3.1581 | 8.6 | (3,-2,-1,0) |
| 28.26 | 3.1575 | 12.8 | (3,-1,-2,0) |
| 28.27 | 3.1564 | 11.8 | (2,1,-3,0) |
| 29.16 | 3.0624 | 9.0 | (1,-1,0,2) |
| 29.16 | 3.0622 | 11.0 | (1,0,-1,2) |
| 31.42 | 2.8474 | 42.4 | (3,-2,-1,1) |
| 31.42 | 2.8469 | 54.4 | (3,-1,-2,1) |
| 31.43 | 2.8461 | 27.0 | (1,2,-3,1) |
| 31.43 | 2.8461 | 27.0 | (2,1,-3,1) |
| 32.14 | 2.7854 | 35.2 | (3,-3,0,0) |
| 32.15 | 2.7841 | 65.4 | (3,0,-3,0) |
| 32.94 | 2.7188 | 100.0 | (2,-1,-1,2) |
| 32.95 | 2.7184 | 45.0 | (1,1,-2,2) |
| 34.70 | 2.5855 | 2.5 | (2,-2,0,2) |
| 34.70 | 2.5850 | 4.5 | (2,0,-2,2) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Th5SiSnBi2 were obtained from the Materials Project database (MP-ID: mp-3307238, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Th5SiSnBi2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 9.64734561
_cell_length_b 9.64734687
_cell_length_c 6.58277915
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.03178611
_symmetry_Int_Tables_number 1
_chemical_formula_structural Th5SiSnBi2
_chemical_formula_sum 'Th10 Si2 Sn2 Bi4'
_cell_volume 530.41580337
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Th Th0 1 0.66734067 0.33118733 0.00278944 1.0
Th Th1 1 0.33118733 0.66734067 0.00278944 1.0
Th Th2 1 0.33118733 0.66734067 0.49721056 1.0
Th Th3 1 0.66734067 0.33118733 0.49721056 1.0
Th Th4 1 0.74499226 0.74499226 0.75000000 1.0
Th Th5 1 0.25565934 0.99975846 0.75000000 1.0
Th Th6 1 0.99975846 0.25565934 0.75000000 1.0
Th Th7 1 0.25480428 0.25480428 0.25000000 1.0
Th Th8 1 0.74502351 0.00416603 0.25000000 1.0
Th Th9 1 0.00416603 0.74502351 0.25000000 1.0
Si Si10 1 0.99922391 0.99922391 0.99999759 1.0
Si Si11 1 0.99922391 0.99922391 0.50000241 1.0
Sn Sn12 1 0.39057895 0.00054411 0.25000000 1.0
Sn Sn13 1 0.00054411 0.39057895 0.25000000 1.0
Bi Bi14 1 0.39114874 0.39114874 0.75000000 1.0
Bi Bi15 1 0.60774280 0.99973285 0.75000000 1.0
Bi Bi16 1 0.99973285 0.60774280 0.75000000 1.0
Bi Bi17 1 0.61034485 0.61034485 0.25000000 1.0
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