Th5GaSnBi2
高熵材料 HEAMP-ID: mp-3318362 · 空间群: Amm2 (#38)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Th5GaSnBi2 were obtained from the Materials Project database (MP-ID: mp-3318362, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Th5GaSnBi2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 9.66370750
_cell_length_b 9.67706224
_cell_length_c 6.59164777
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.95435911
_symmetry_Int_Tables_number 1
_chemical_formula_structural Th5GaSnBi2
_chemical_formula_sum 'Th10 Ga2 Sn2 Bi4'
_cell_volume 534.08636034
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Th Th0 1 0.99989018 0.26005018 0.25000000 1.0
Th Th1 1 0.74036827 0.00000000 0.75000000 1.0
Th Th2 1 0.73984000 0.73994982 0.25000000 1.0
Th Th3 1 0.66901729 0.33614488 0.50288481 1.0
Th Th4 1 0.99584635 0.73575681 0.75000000 1.0
Th Th5 1 0.26009054 0.26424319 0.75000000 1.0
Th Th6 1 0.33287140 0.66385512 0.99711519 1.0
Th Th7 1 0.66901729 0.33614488 0.99711519 1.0
Th Th8 1 0.33287140 0.66385512 0.50288481 1.0
Th Th9 1 0.25938163 0.00000000 0.25000000 1.0
Ga Ga10 1 0.00074608 0.00000000 0.99867956 1.0
Ga Ga11 1 0.00074608 0.00000000 0.50132044 1.0
Sn Sn12 1 0.99942828 0.38620500 0.75000000 1.0
Sn Sn13 1 0.61322328 0.61379500 0.75000000 1.0
Bi Bi14 1 0.61188249 0.00000000 0.25000000 1.0
Bi Bi15 1 0.38583331 0.00000000 0.75000000 1.0
Bi Bi16 1 0.38847288 0.38800162 0.25000000 1.0
Bi Bi17 1 0.00047226 0.61199838 0.25000000 1.0
获取直接链接