Ho4Si8Tc5Os
高熵材料 HEAMP-ID: mp-3318649 · 空间群: P1 (#1)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ho4Si8Tc5Os were obtained from the Materials Project database (MP-ID: mp-3318649, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
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# generated using pymatgen
data_Ho4Si8Tc5Os
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 6.73681947
_cell_length_b 6.77586206
_cell_length_c 6.71256211
_cell_angle_alpha 69.76496195
_cell_angle_beta 90.22236416
_cell_angle_gamma 90.84328678
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ho4Si8Tc5Os
_chemical_formula_sum 'Ho4 Si8 Tc5 Os1'
_cell_volume 287.47072341
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ho Ho0 1 0.66785452 0.43648485 0.19241841 1.0
Ho Ho1 1 0.16495083 0.06048484 0.80820479 1.0
Ho Ho2 1 0.32731436 0.55858898 0.80836173 1.0
Ho Ho3 1 0.82514259 0.94443640 0.19226851 1.0
Si Si4 1 0.43191633 0.10707639 0.11278359 1.0
Si Si5 1 0.94180536 0.38695247 0.89429691 1.0
Si Si6 1 0.54927785 0.87247464 0.89765586 1.0
Si Si7 1 0.04897985 0.63283720 0.10036235 1.0
Si Si8 1 0.86331094 0.13429472 0.50871804 1.0
Si Si9 1 0.36417418 0.36520691 0.49586088 1.0
Si Si10 1 0.15156903 0.87748742 0.46635324 1.0
Si Si11 1 0.64944254 0.62313004 0.52443133 1.0
Tc Tc12 1 0.50019422 0.98944148 0.49860876 1.0
Tc Tc13 1 0.99958845 0.51372736 0.49952175 1.0
Tc Tc14 1 0.15020938 0.26131257 0.24551897 1.0
Tc Tc15 1 0.64840270 0.24488797 0.75917796 1.0
Tc Tc16 1 0.85269901 0.77149327 0.76567906 1.0
Os Os17 1 0.36317085 0.71968148 0.22977786 1.0
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