Th4Si10(OsPt)3
高熵材料 HEAMP-ID: mp-3323022 · 空间群: Cm (#8)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 15.28 | 5.7996 | 3.6 | (1,1,-1) |
| 17.70 | 5.0099 | 4.8 | (1,-1,1) |
| 23.06 | 3.8567 | 9.5 | (1,1,-2) |
| 23.09 | 3.8512 | 4.5 | (2,0,-1) |
| 23.09 | 3.8512 | 4.5 | (1,1,0) |
| 23.43 | 3.7964 | 5.6 | (0,2,-2) |
| 23.50 | 3.7860 | 5.7 | (2,0,0) |
| 24.35 | 3.6560 | 11.7 | (1,-2,1) |
| 24.38 | 3.6513 | 6.0 | (2,-1,0) |
| 24.38 | 3.6513 | 6.0 | (1,0,1) |
| 24.66 | 3.6105 | 28.8 | (1,2,-2) |
| 24.70 | 3.6038 | 28.1 | (2,1,-1) |
| 27.78 | 3.2119 | 16.8 | (1,-2,2) |
| 27.82 | 3.2071 | 16.4 | (2,-1,1) |
| 29.70 | 3.0077 | 41.5 | (1,-1,-1) |
| 30.84 | 2.8998 | 35.3 | (2,2,-2) |
| 32.01 | 2.7963 | 23.6 | (1,0,-2) |
| 32.02 | 2.7953 | 11.8 | (2,-1,-1) |
| 32.02 | 2.7953 | 11.8 | (0,1,1) |
| 32.79 | 2.7309 | 1.0 | (0,3,-2) |
| 33.56 | 2.6700 | 9.1 | (2,0,-2) |
| 34.35 | 2.6106 | 88.1 | (1,-3,2) |
| 34.42 | 2.6056 | 43.4 | (3,-1,0) |
| 34.42 | 2.6056 | 43.4 | (2,0,1) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Th4Si10(OsPt)3 were obtained from the Materials Project database (MP-ID: mp-3323022, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Th4Si10(OsPt)3
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 8.22312989
_cell_length_b 8.24267052
_cell_length_c 8.24267042
_cell_angle_alpha 137.19788419
_cell_angle_beta 105.03530723
_cell_angle_gamma 90.43051650
_symmetry_Int_Tables_number 1
_chemical_formula_structural Th4Si10(OsPt)3
_chemical_formula_sum 'Th4 Si10 Os3 Pt3'
_cell_volume 349.55812439
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Th Th0 1 0.86289943 0.63014006 0.23275937 1.0
Th Th1 1 0.14082393 0.37195961 0.76886333 1.0
Th Th2 1 0.39500299 0.12840107 0.26660192 1.0
Th Th3 1 0.60117158 0.87003795 0.73113364 1.0
Si Si4 1 0.49493746 0.75241733 0.25510958 1.0
Si Si5 1 0.49493746 0.23982787 0.74252012 1.0
Si Si6 1 0.22479094 0.97310621 0.74473690 1.0
Si Si7 1 0.77619727 0.52617328 0.74948146 1.0
Si Si8 1 0.77619727 0.02671481 0.25002399 1.0
Si Si9 1 0.22479094 0.48005404 0.25168473 1.0
Si Si10 1 0.04264173 0.89319951 0.14944222 1.0
Si Si11 1 0.96253190 0.10759519 0.85493671 1.0
Si Si12 1 0.74743664 0.39253103 0.35490561 1.0
Si Si13 1 0.25444963 0.60726343 0.64718620 1.0
Os Os14 1 0.00029349 0.75125428 0.75015818 1.0
Os Os15 1 0.00029349 0.25013531 0.24903921 1.0
Os Os16 1 0.24454241 0.86003491 0.38450850 1.0
Pt Pt17 1 0.75154824 0.13927422 0.61227303 1.0
Pt Pt18 1 0.47626025 0.36145613 0.11480412 1.0
Pt Pt19 1 0.52825396 0.63842276 0.88983120 1.0
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