HfV6GaSn5
高熵材料 HEAMP-ID: mp-3323834 · 空间群: P-6m2 (#187)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 9.74 | 9.0853 | 3.6 | (0,0,0,1) |
| 18.97 | 4.6781 | 6.6 | (0,1,-1,0) |
| 19.00 | 4.6700 | 6.3 | (1,0,-1,0) |
| 19.01 | 4.6685 | 6.3 | (1,1,-2,0) |
| 19.54 | 4.5426 | 16.3 | (0,0,0,2) |
| 21.36 | 4.1591 | 8.6 | (0,1,-1,1) |
| 21.39 | 4.1534 | 8.6 | (1,0,-1,1) |
| 21.40 | 4.1524 | 8.6 | (1,1,-2,1) |
| 27.37 | 3.2590 | 5.3 | (0,1,-1,2) |
| 27.39 | 3.2562 | 5.5 | (1,0,-1,2) |
| 27.39 | 3.2557 | 5.5 | (1,1,-2,2) |
| 29.50 | 3.0284 | 24.1 | (0,0,0,3) |
| 33.19 | 2.6996 | 100.0 | (1,-1,0,0) |
| 33.20 | 2.6988 | 99.9 | (1,2,-3,0) |
| 33.26 | 2.6941 | 99.5 | (2,1,-3,0) |
| 35.31 | 2.5422 | 62.2 | (0,1,-1,3) |
| 35.32 | 2.5409 | 62.4 | (1,0,-1,3) |
| 35.33 | 2.5407 | 62.5 | (1,1,-2,3) |
| 38.49 | 2.3391 | 28.8 | (0,2,-2,0) |
| 38.56 | 2.3350 | 29.1 | (2,0,-2,0) |
| 38.57 | 2.3343 | 29.0 | (2,2,-4,0) |
| 38.80 | 2.3207 | 74.9 | (1,-1,0,2) |
| 38.81 | 2.3202 | 74.9 | (1,2,-3,2) |
| 38.86 | 2.3172 | 74.6 | (2,1,-3,2) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of HfV6GaSn5 were obtained from the Materials Project database (MP-ID: mp-3323834, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_HfV6GaSn5
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 5.38820866
_cell_length_b 5.39757128
_cell_length_c 9.08524717
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 60.07838199
_symmetry_Int_Tables_number 1
_chemical_formula_structural HfV6GaSn5
_chemical_formula_sum 'Hf1 V6 Ga1 Sn5'
_cell_volume 229.00905115
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Hf Hf0 1 0.99975589 0.00049976 0.50000000 1.0
V V1 1 0.49457766 0.01099999 0.25883989 1.0
V V2 1 0.01081045 0.49451196 0.25856159 1.0
V V3 1 0.49463855 0.49438688 0.25850841 1.0
V V4 1 0.49457766 0.01099999 0.74116011 1.0
V V5 1 0.01081045 0.49451196 0.74143841 1.0
V V6 1 0.49463855 0.49438688 0.74149159 1.0
Ga Ga7 1 0.33343951 0.33292983 0.50000000 1.0
Sn Sn8 1 0.00011856 0.99981416 0.17367795 1.0
Sn Sn9 1 0.00011856 0.99981416 0.82632205 1.0
Sn Sn10 1 0.66635489 0.66717987 0.00000000 1.0
Sn Sn11 1 0.33359481 0.33282379 0.00000000 1.0
Sn Sn12 1 0.66636246 0.66714077 0.50000000 1.0
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