Dy10GaSi3Bi4
高熵材料 HEAMP-ID: mp-3325938 · 空间群: Cm (#8)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 11.56 | 7.6556 | 8.6 | (1,-1,0) |
| 16.72 | 5.3021 | 12.0 | (1,0,1) |
| 16.86 | 5.2581 | 18.5 | (1,0,-1) |
| 22.34 | 3.9802 | 21.3 | (0,0,2) |
| 22.37 | 3.9747 | 20.7 | (1,1,0) |
| 23.24 | 3.8278 | 12.4 | (2,-2,0) |
| 23.49 | 3.7879 | 3.4 | (2,-1,1) |
| 23.59 | 3.7717 | 1.3 | (2,-1,-1) |
| 24.94 | 3.5696 | 43.4 | (1,1,1) |
| 25.14 | 3.5427 | 41.8 | (1,1,-1) |
| 25.22 | 3.5315 | 20.6 | (1,-1,2) |
| 25.25 | 3.5276 | 10.4 | (0,2,0) |
| 25.25 | 3.5276 | 10.4 | (2,0,0) |
| 25.60 | 3.4791 | 37.4 | (1,0,2) |
| 25.79 | 3.4542 | 36.1 | (1,0,-2) |
| 30.54 | 2.9268 | 21.9 | (1,-2,-2) |
| 30.54 | 2.9268 | 21.9 | (2,-1,2) |
| 30.70 | 2.9119 | 20.8 | (1,-2,2) |
| 30.70 | 2.9119 | 20.8 | (2,-1,-2) |
| 31.66 | 2.8259 | 71.3 | (1,1,2) |
| 31.97 | 2.7993 | 60.3 | (1,1,-2) |
| 32.45 | 2.7590 | 99.6 | (2,-2,2) |
| 32.47 | 2.7572 | 49.8 | (1,-3,0) |
| 32.47 | 2.7572 | 49.8 | (3,-1,0) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Dy10GaSi3Bi4 were obtained from the Materials Project database (MP-ID: mp-3325938, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Dy10GaSi3Bi4
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 8.62604190
_cell_length_b 8.62604317
_cell_length_c 7.96077841
_cell_angle_alpha 89.75059641
_cell_angle_beta 89.75059234
_cell_angle_gamma 125.12226497
_symmetry_Int_Tables_number 1
_chemical_formula_structural Dy10GaSi3Bi4
_chemical_formula_sum 'Dy10 Ga1 Si3 Bi4'
_cell_volume 484.47734479
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Dy Dy0 1 0.04151717 0.28594642 0.33664993 1.0
Dy Dy1 1 0.95794950 0.71594168 0.66321239 1.0
Dy Dy2 1 0.45899645 0.21158839 0.83544016 1.0
Dy Dy3 1 0.78719203 0.54067356 0.16348882 1.0
Dy Dy4 1 0.54067356 0.78719203 0.16348882 1.0
Dy Dy5 1 0.21158839 0.45899645 0.83544016 1.0
Dy Dy6 1 0.71594168 0.95794950 0.66321239 1.0
Dy Dy7 1 0.28594642 0.04151717 0.33664993 1.0
Dy Dy8 1 0.99920893 0.99920893 0.99962425 1.0
Dy Dy9 1 0.50102365 0.50102365 0.50137575 1.0
Ga Ga10 1 0.36542514 0.36542514 0.13304420 1.0
Si Si11 1 0.63284427 0.63284427 0.86759881 1.0
Si Si12 1 0.13941372 0.13941372 0.63680400 1.0
Si Si13 1 0.86247378 0.86247378 0.36149467 1.0
Bi Bi14 1 0.79214250 0.20447900 0.00023270 1.0
Bi Bi15 1 0.20447900 0.79214250 0.00023270 1.0
Bi Bi16 1 0.70836514 0.29482168 0.50100416 1.0
Bi Bi17 1 0.29482168 0.70836514 0.50100416 1.0
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