Th2Si2Se
高熵材料 HEAMP-ID: mp-3327251 · 空间群: P-6m2 (#187)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 22.54 | 3.9448 | 15.1 | (0,0,0,2) |
| 24.72 | 3.6017 | 40.1 | (1,-1,0,0) |
| 24.72 | 3.6017 | 20.1 | (1,0,-1,0) |
| 27.22 | 3.2764 | 1.6 | (0,1,-1,1) |
| 27.22 | 3.2764 | 3.1 | (1,0,-1,1) |
| 33.70 | 2.6598 | 100.0 | (1,0,-1,2) |
| 34.09 | 2.6299 | 1.1 | (0,0,0,3) |
| 42.57 | 2.1239 | 2.9 | (1,0,-1,3) |
| 43.52 | 2.0794 | 21.3 | (1,1,-2,0) |
| 43.52 | 2.0794 | 10.7 | (2,-1,-1,0) |
| 46.02 | 1.9724 | 8.4 | (0,0,0,4) |
| 49.55 | 1.8395 | 4.1 | (1,-2,1,2) |
| 49.55 | 1.8395 | 8.3 | (2,-1,-1,2) |
| 50.69 | 1.8008 | 3.1 | (0,2,-2,0) |
| 50.69 | 1.8008 | 6.1 | (2,0,-2,0) |
| 52.93 | 1.7300 | 4.8 | (0,1,-1,4) |
| 52.93 | 1.7300 | 9.5 | (1,0,-1,4) |
| 56.14 | 1.6382 | 7.9 | (0,2,-2,2) |
| 56.14 | 1.6382 | 15.9 | (2,0,-2,2) |
| 56.41 | 1.6311 | 1.1 | (2,-1,-1,3) |
| 64.47 | 1.4453 | 2.5 | (1,0,-1,5) |
| 65.19 | 1.4310 | 6.0 | (1,-2,1,4) |
| 65.19 | 1.4310 | 12.0 | (2,-1,-1,4) |
| 68.99 | 1.3613 | 1.2 | (1,-3,2,0) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Th2Si2Se were obtained from the Materials Project database (MP-ID: mp-3327251, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Th2Si2Se
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.15884732
_cell_length_b 4.15884806
_cell_length_c 7.88963437
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00000208
_symmetry_Int_Tables_number 1
_chemical_formula_structural Th2Si2Se
_chemical_formula_sum 'Th2 Si2 Se1'
_cell_volume 118.17715498
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Th Th0 1 0.00000000 0.00000000 0.26316608 1.0
Th Th1 1 0.00000000 0.00000000 0.73683392 1.0
Si Si2 1 0.33333300 0.66666700 0.50000000 1.0
Si Si3 1 0.66666700 0.33333300 0.50000000 1.0
Se Se4 1 0.66666700 0.33333300 0.00000000 1.0
获取直接链接