Th2Be2SiGe
高熵材料 HEAMP-ID: mp-3327526 · 空间群: P-6m2 (#187)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 10.29 | 8.5990 | 1.2 | (0,0,0,1) |
| 20.66 | 4.2995 | 22.2 | (0,0,0,2) |
| 26.08 | 3.4169 | 55.4 | (1,0,-1,0) |
| 28.10 | 3.1754 | 1.5 | (0,1,-1,1) |
| 28.10 | 3.1754 | 3.1 | (1,0,-1,1) |
| 33.50 | 2.6750 | 100.0 | (1,0,-1,2) |
| 41.10 | 2.1960 | 1.4 | (1,0,-1,3) |
| 42.03 | 2.1498 | 11.0 | (0,0,0,4) |
| 46.01 | 1.9727 | 17.2 | (1,1,-2,0) |
| 46.01 | 1.9727 | 8.6 | (2,-1,-1,0) |
| 50.13 | 1.8196 | 6.5 | (0,1,-1,4) |
| 50.13 | 1.8196 | 13.1 | (1,0,-1,4) |
| 50.93 | 1.7930 | 9.1 | (1,1,-2,2) |
| 50.93 | 1.7930 | 4.6 | (2,-1,-1,2) |
| 53.65 | 1.7084 | 8.2 | (2,0,-2,0) |
| 58.10 | 1.5877 | 7.1 | (0,2,-2,2) |
| 58.10 | 1.5877 | 14.2 | (2,0,-2,2) |
| 64.06 | 1.4535 | 19.4 | (2,-1,-1,4) |
| 65.08 | 1.4332 | 1.1 | (0,0,0,6) |
| 70.39 | 1.3375 | 2.4 | (0,2,-2,4) |
| 70.39 | 1.3375 | 4.9 | (2,0,-2,4) |
| 71.37 | 1.3216 | 11.5 | (1,0,-1,6) |
| 73.30 | 1.2915 | 4.4 | (2,1,-3,0) |
| 73.30 | 1.2915 | 2.2 | (3,-1,-2,0) |
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Th2Be2SiGe were obtained from the Materials Project database (MP-ID: mp-3327526, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Th2Be2SiGe
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 3.94543423
_cell_length_b 3.94543476
_cell_length_c 8.59900609
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99999558
_symmetry_Int_Tables_number 1
_chemical_formula_structural Th2Be2SiGe
_chemical_formula_sum 'Th2 Be2 Si1 Ge1'
_cell_volume 115.92272531
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Th Th0 1 0.00000000 0.00000000 0.50387225 1.0
Th Th1 1 0.00000000 0.00000000 0.99612775 1.0
Be Be2 1 0.66666700 0.33333300 0.75000000 1.0
Be Be3 1 0.33333300 0.66666700 0.25000000 1.0
Si Si4 1 0.33333300 0.66666700 0.75000000 1.0
Ge Ge5 1 0.66666700 0.33333300 0.25000000 1.0
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