Ho4Ga2TcOs5
高熵材料 HEAMP-ID: mp-3343096 · 空间群: Amm2 (#38)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Ho4Ga2TcOs5 were obtained from the Materials Project database (MP-ID: mp-3343096, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
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# generated using pymatgen
data_Ho4Ga2TcOs5
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 5.31293317
_cell_length_b 5.31293263
_cell_length_c 8.73469798
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.14545661
_symmetry_Int_Tables_number 1
_chemical_formula_structural Ho4Ga2TcOs5
_chemical_formula_sum 'Ho4 Ga2 Tc1 Os5'
_cell_volume 215.33907015
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ho Ho0 1 0.32778499 0.67221501 0.44270333 1.0
Ho Ho1 1 0.66212105 0.33787895 0.56974550 1.0
Ho Ho2 1 0.66212105 0.33787895 0.93025450 1.0
Ho Ho3 1 0.32778499 0.67221501 0.05729667 1.0
Ga Ga4 1 0.83875403 0.65285918 0.25000000 1.0
Ga Ga5 1 0.34714082 0.16124597 0.25000000 1.0
Tc Tc6 1 0.84086844 0.15913156 0.25000000 1.0
Os Os7 1 0.98835198 0.01164802 0.49728491 1.0
Os Os8 1 0.98835198 0.01164802 0.00271509 1.0
Os Os9 1 0.18253666 0.81746334 0.75000000 1.0
Os Os10 1 0.16286988 0.32868586 0.75000000 1.0
Os Os11 1 0.67131414 0.83713012 0.75000000 1.0
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