Th2Ga3SiNi4
高熵材料 HEAMP-ID: mp-3346360 · 空间群: P4mm (#99)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of Th2Ga3SiNi4 were obtained from the Materials Project database (MP-ID: mp-3346360, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_Th2Ga3SiNi4
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 4.12074184
_cell_length_b 4.12074184
_cell_length_c 9.71741825
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 90.00000000
_symmetry_Int_Tables_number 1
_chemical_formula_structural Th2Ga3SiNi4
_chemical_formula_sum 'Th2 Ga3 Si1 Ni4'
_cell_volume 165.00674969
_cell_formula_units_Z 1
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Th Th0 1 0.00000000 0.50000000 0.24158005 1.0
Th Th1 1 0.50000000 0.00000000 0.75585839 1.0
Ga Ga2 1 0.00000000 0.00000000 0.49761811 1.0
Ga Ga3 1 0.50000000 0.50000000 0.49761811 1.0
Ga Ga4 1 0.00000000 0.50000000 0.87746666 1.0
Si Si5 1 0.50000000 0.00000000 0.12283845 1.0
Ni Ni6 1 0.00000000 0.00000000 0.00767361 1.0
Ni Ni7 1 0.50000000 0.50000000 0.00767361 1.0
Ni Ni8 1 0.00000000 0.50000000 0.63251782 1.0
Ni Ni9 1 0.50000000 0.00000000 0.35915417 1.0
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