GaS
弹性数据 ELAMP-ID: mp-556742 · 空间群: P6_3/mmc (#194)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 11.07 | 7.9908 | 89.3 | (0,0,0,2) |
| 22.25 | 3.9954 | 53.2 | (0,0,0,4) |
| 28.70 | 3.1100 | 82.7 | (1,0,-1,0) |
| 29.25 | 3.0528 | 16.5 | (1,0,-1,1) |
| 30.85 | 2.8983 | 30.3 | (1,-1,0,2) |
| 30.85 | 2.8983 | 60.6 | (1,0,-1,2) |
| 33.36 | 2.6858 | 23.7 | (1,0,-1,3) |
| 33.65 | 2.6636 | 14.2 | (0,0,0,6) |
| 36.62 | 2.4542 | 3.1 | (1,0,-1,4) |
| 44.80 | 2.0230 | 100.0 | (1,0,-1,6) |
| 45.40 | 1.9977 | 3.3 | (0,0,0,8) |
| 49.53 | 1.8404 | 8.2 | (1,0,-1,7) |
| 50.85 | 1.7956 | 18.9 | (1,-2,1,0) |
| 50.85 | 1.7956 | 37.8 | (2,-1,-1,0) |
| 52.21 | 1.7519 | 7.8 | (2,-1,-1,2) |
| 52.21 | 1.7519 | 3.9 | (1,1,-2,2) |
| 54.60 | 1.6808 | 11.8 | (1,-1,0,8) |
| 54.60 | 1.6808 | 23.7 | (1,0,-1,8) |
| 56.16 | 1.6378 | 7.1 | (1,-2,1,4) |
| 56.16 | 1.6378 | 14.2 | (2,-1,-1,4) |
| 59.44 | 1.5550 | 3.6 | (2,-2,0,0) |
| 59.44 | 1.5550 | 7.1 | (2,0,-2,0) |
| 59.75 | 1.5477 | 1.1 | (2,-2,0,1) |
| 60.67 | 1.5264 | 12.4 | (2,0,-2,2) |
能量属性
电子属性
磁性属性
弹性属性
特征分析
关联任务
引用参考
The crystal structure and related material properties of GaS were obtained from the Materials Project database (MP-ID: mp-556742, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_GaS
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 3.59114487
_cell_length_b 3.59114519
_cell_length_c 15.98161982
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 120.00000639
_symmetry_Int_Tables_number 1
_chemical_formula_structural GaS
_chemical_formula_sum 'Ga4 S4'
_cell_volume 178.49139667
_cell_formula_units_Z 4
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Ga Ga0 1 0.00000000 0.00000000 0.17351214 1.0
Ga Ga1 1 0.00000000 -0.00000000 0.67351214 1.0
Ga Ga2 1 -0.00000000 0.00000000 0.32648786 1.0
Ga Ga3 1 0.00000000 -0.00000000 0.82648786 1.0
S S4 1 0.66666700 0.33333300 0.10660100 1.0
S S5 1 0.33333300 0.66666700 0.60660100 1.0
S S6 1 0.66666700 0.33333300 0.39339900 1.0
S S7 1 0.33333300 0.66666700 0.89339900 1.0
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