ThSiO4
弹性数据 ELAMP-ID: mp-5836 · 空间群: I4_1/amd (#141)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 18.72 | 4.7397 | 90.3 | (1,0,-1) |
| 24.93 | 3.5711 | 100.0 | (1,-1,1) |
| 31.36 | 2.8522 | 43.0 | (2,-1,0) |
| 33.39 | 2.6837 | 75.3 | (1,1,-2) |
| 35.55 | 2.5252 | 25.4 | (0,0,2) |
| 37.97 | 2.3699 | 1.5 | (2,0,-2) |
| 40.48 | 2.2286 | 24.8 | (2,-1,-2) |
| 44.75 | 2.0253 | 17.3 | (2,1,-2) |
| 48.13 | 1.8907 | 12.9 | (1,0,-3) |
| 48.13 | 1.8907 | 12.9 | (3,-2,-1) |
| 49.57 | 1.8390 | 60.3 | (2,0,-3) |
| 51.16 | 1.7856 | 7.6 | (2,-2,2) |
| 51.16 | 1.7856 | 7.6 | (2,-2,-2) |
| 51.90 | 1.7617 | 14.6 | (2,1,-3) |
| 54.95 | 1.6709 | 10.5 | (3,-2,1) |
| 57.73 | 1.5971 | 11.2 | (1,-1,3) |
| 57.73 | 1.5971 | 3.7 | (3,-3,-1) |
| 58.25 | 1.5840 | 3.5 | (2,2,-2) |
| 58.41 | 1.5799 | 5.3 | (3,0,-3) |
| 62.47 | 1.4866 | 8.6 | (1,1,-4) |
| 62.47 | 1.4866 | 8.6 | (4,-2,-1) |
| 64.34 | 1.4479 | 3.2 | (1,3,-3) |
| 64.34 | 1.4479 | 9.5 | (3,1,-3) |
| 64.49 | 1.4448 | 3.8 | (2,1,-4) |
能量属性
电子属性
磁性属性
弹性属性
特征分析
关联任务
引用参考
The crystal structure and related material properties of ThSiO4 were obtained from the Materials Project database (MP-ID: mp-5836, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_ThSiO4
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 5.96167707
_cell_length_b 5.96167732
_cell_length_c 5.96167787
_cell_angle_alpha 106.40151089
_cell_angle_beta 106.40150066
_cell_angle_gamma 115.80226390
_symmetry_Int_Tables_number 1
_chemical_formula_structural ThSiO4
_chemical_formula_sum 'Th2 Si2 O8'
_cell_volume 161.60125464
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
Th Th0 1 0.62500000 0.37500000 0.25000000 1.0
Th Th1 1 0.37500000 0.62500000 0.75000000 1.0
Si Si2 1 0.12500000 0.87500000 0.25000000 1.0
Si Si3 1 0.87500000 0.12500000 0.75000000 1.0
O O4 1 0.13632453 0.70985468 0.42646986 1.0
O O5 1 0.70985468 0.78338582 0.57353014 1.0
O O6 1 0.70985468 0.13632453 0.92646986 1.0
O O7 1 0.78338582 0.70985468 0.07353014 1.0
O O8 1 0.29014532 0.86367547 0.07353014 1.0
O O9 1 0.21661418 0.29014532 0.92646986 1.0
O O10 1 0.86367547 0.29014532 0.57353014 1.0
O O11 1 0.29014532 0.21661418 0.42646986 1.0
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