InGaSe2
传统材料 TRAMP-ID: mp-675525 · 空间群: P4/ncc (#130)
基础信息
能量属性
电子属性
磁性属性
弹性属性
弹性数据暂不开放
特征分析
关联任务
引用参考
The crystal structure and related material properties of InGaSe2 were obtained from the Materials Project database (MP-ID: mp-675525, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_InGaSe2
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 8.28681100
_cell_length_b 8.28681100
_cell_length_c 6.33552100
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 90.00000000
_symmetry_Int_Tables_number 1
_chemical_formula_structural InGaSe2
_chemical_formula_sum 'In4 Ga4 Se8'
_cell_volume 435.06806126
_cell_formula_units_Z 4
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
In In0 1 0.50000000 0.00000000 0.85523500 1.0
In In1 1 0.50000000 0.00000000 0.35523500 1.0
In In2 1 0.00000000 0.50000000 0.64476500 1.0
In In3 1 0.00000000 0.50000000 0.14476500 1.0
Ga Ga4 1 0.50000000 0.50000000 0.50000000 1.0
Ga Ga5 1 0.00000000 0.00000000 0.00000000 1.0
Ga Ga6 1 0.50000000 0.50000000 0.00000000 1.0
Ga Ga7 1 0.00000000 0.00000000 0.50000000 1.0
Se Se8 1 0.66131400 0.66131400 0.25000000 1.0
Se Se9 1 0.16131400 0.16131400 0.75000000 1.0
Se Se10 1 0.66131400 0.33868600 0.75000000 1.0
Se Se11 1 0.16131400 0.83868600 0.25000000 1.0
Se Se12 1 0.83868600 0.16131400 0.25000000 1.0
Se Se13 1 0.33868600 0.66131400 0.75000000 1.0
Se Se14 1 0.83868600 0.83868600 0.75000000 1.0
Se Se15 1 0.33868600 0.33868600 0.25000000 1.0
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