InGaO3
弹性数据 ELAMP-ID: mp-8098 · 空间群: P6_3/mmc (#194)
基础信息
X 射线衍射
| 2θ | d (Å) | I | hkl |
|---|---|---|---|
| 14.68 | 6.0330 | 20.6 | (0,0,0,2) |
| 29.61 | 3.0165 | 78.7 | (0,0,0,4) |
| 31.01 | 2.8835 | 12.8 | (1,0,-1,0) |
| 31.01 | 2.8835 | 25.5 | (1,-1,0,0) |
| 31.91 | 2.8046 | 69.2 | (1,0,-1,1) |
| 34.47 | 2.6016 | 50.0 | (1,0,-1,2) |
| 34.47 | 2.6016 | 100.0 | (1,-1,0,2) |
| 38.41 | 2.3435 | 8.5 | (1,0,-1,3) |
| 43.41 | 2.0844 | 51.2 | (1,0,-1,4) |
| 49.24 | 1.8506 | 17.3 | (1,0,-1,5) |
| 55.17 | 1.6648 | 40.5 | (2,-1,-1,0) |
| 55.17 | 1.6648 | 20.3 | (1,-2,1,0) |
| 55.73 | 1.6495 | 51.3 | (1,0,-1,6) |
| 57.42 | 1.6048 | 3.5 | (2,-1,-1,2) |
| 61.48 | 1.5083 | 10.2 | (0,0,0,8) |
| 62.81 | 1.4795 | 3.1 | (1,0,-1,7) |
| 62.81 | 1.4795 | 6.2 | (1,-1,0,7) |
| 63.86 | 1.4576 | 33.6 | (2,-1,-1,4) |
| 63.86 | 1.4576 | 16.8 | (1,-2,1,4) |
| 64.65 | 1.4418 | 1.5 | (2,0,-2,0) |
| 64.65 | 1.4418 | 2.9 | (2,-2,0,0) |
| 65.16 | 1.4316 | 2.5 | (2,0,-2,1) |
| 65.16 | 1.4316 | 5.1 | (2,-2,0,1) |
| 66.70 | 1.4023 | 7.6 | (2,0,-2,2) |
能量属性
电子属性
磁性属性
弹性属性
特征分析
关联任务
引用参考
The crystal structure and related material properties of InGaO3 were obtained from the Materials Project database (MP-ID: mp-8098, database version v2026.04.13).
Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0
晶体结构 3D 渲染
加载 3D 结构...
# generated using pymatgen
data_InGaO3
_symmetry_space_group_name_H-M 'P 1'
_cell_length_a 3.32960934
_cell_length_b 3.32960884
_cell_length_c 12.06608203
_cell_angle_alpha 90.00000000
_cell_angle_beta 90.00000000
_cell_angle_gamma 119.99999507
_symmetry_Int_Tables_number 1
_chemical_formula_structural InGaO3
_chemical_formula_sum 'In2 Ga2 O6'
_cell_volume 115.84663499
_cell_formula_units_Z 2
loop_
_symmetry_equiv_pos_site_id
_symmetry_equiv_pos_as_xyz
1 'x, y, z'
loop_
_atom_site_type_symbol
_atom_site_label
_atom_site_symmetry_multiplicity
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
In In0 1 -0.00000000 0.00000000 0.50000000 1.0
In In1 1 -0.00000000 0.00000000 0.00000000 1.0
Ga Ga2 1 0.66666700 0.33333300 0.75000000 1.0
Ga Ga3 1 0.33333300 0.66666700 0.25000000 1.0
O O4 1 0.33333300 0.66666700 0.41255627 1.0
O O5 1 0.66666700 0.33333300 0.91255627 1.0
O O6 1 0.66666700 0.33333300 0.58744373 1.0
O O7 1 0.33333300 0.66666700 0.08744373 1.0
O O8 1 -0.00000000 -0.00000000 0.25000000 1.0
O O9 1 -0.00000000 0.00000000 0.75000000 1.0
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