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Ho10Ga3SiBi4

高熵材料 HEA

MP-ID: mp-3295910 · Space group: Cm (#8)

Basic Information

Formula
Ho10Ga3SiBi4
MP-ID
mp-3295910
Elements
4
Sites
18
Density
9.3409
g/cm³
Volume
483.98
ų
Cell a
8.6283
Å
Cell b
8.6283
Å
Cell c
7.9558
Å
α Angle
89.35
°
β Angle
89.35
°
γ Angle
125.18
°
Space Group
Cm
Point Group
m
Crystal System
Monoclinic
Bravais Lattice
mC
Stability
Yes
Packing Fraction
-

X-ray Diffraction

Diffraction Pattern
X-axis: 2θ (°); Y-axis: relative intensity; Cu Kα ; λ=1.5418 Å
Diffraction Peaks (Top 24)
2θd (Å)Ihkl
11.12 7.9534 1.1 (0,0,1)
11.55 7.6595 4.0 (1,-1,0)
12.55 7.0509 1.4 (1,0,0)
16.62 5.3342 11.9 (1,0,1)
16.99 5.2198 9.0 (1,0,-1)
16.99 5.2198 9.0 (0,1,-1)
22.36 3.9767 25.1 (0,0,2)
22.39 3.9711 24.4 (1,1,0)
23.23 3.8298 10.9 (2,-2,0)
23.41 3.8005 3.6 (2,-1,1)
23.41 3.8005 3.6 (1,-2,-1)
23.67 3.7585 2.8 (2,-1,-1)
24.81 3.5883 49.9 (1,1,1)
25.23 3.5294 25.4 (1,-1,2)
25.26 3.5255 25.7 (2,0,0)
25.31 3.5185 49.9 (1,1,-1)
25.47 3.4966 38.2 (1,0,2)
25.96 3.4319 39.8 (1,0,-2)
27.45 3.2494 2.1 (2,0,1)
27.45 3.2494 2.1 (0,2,1)
27.91 3.1973 2.9 (2,0,-1)
30.43 2.9376 74.1 (2,-1,2)
30.85 2.8989 66.7 (2,-1,-2)
31.44 2.8452 100.0 (1,1,2)
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Energy Properties

Formation Energy/atom
-0.86664
eV/atom
Energy/atom
-34.52912
eV/atom
Energy above Hull
0.0000
eV/atom
Uncorrected Energy
-34.5291
eV/atom
Volume/atom
26.89
ų
c/a Ratio
0.9221

Electronic Properties

Metallic
Metal
Band Gap
0
eV
Direct Gap
No
CBM
N/A
eV

Magnetic Properties

Magnetic
Yes
Total Mag. Moment
0.8900
μB
Mag. Ordering
FM
Mag. Sites
6
Magnetization/Volume
0.001840
μB/ų

Elastic Properties

Elastic data not available

Feature Analysis

Element Composition (atomic fraction)
Composition Info
Major / Matrix Element
Ho · 0.556
Element Family
Lanthanide
Solute Fraction
0.444
Interstitial Fraction
0.056
Composite Radar (normalized)
Element-Class Share
Mix Entropy ΔS/R
1.1200
HEA criterion (>1.0 = high entropy)
Mix Entropy ΔS
9.3116
J/mol·K
Ω Parameter
5.9659
Ω > 1.1 favors solid solution
Atomic Size Mismatch δr
11.207%
δr < 6.6% favors single-phase solid solution
Electronegativity Diff Δχ
0.3520
smaller = more stable mixing
VEC
7.944
valence electron concentration, affects phase stability
Mix Enthalpy ΔH_mix
-1.918
kJ/mol; negative = exothermic mixing
Entropy Norm
0.8079
SS Former
0
Phase Tendency
IM

Related Tasks

Related computation task IDs (1)

Citation & References

Materials Project Page
https://materialsproject.org/materials/mp-3295910
Reference Citation

The crystal structure and related material properties of Ho10Ga3SiBi4 were obtained from the Materials Project database (MP-ID: mp-3295910, database version v2026.04.13).

Literature Citation

Horton, M.K., Huck, P., Yang, R.X. et al. Accelerated data-driven materials science with the Materials Project. Nat. Mater. 24, 1522–1532 (2025). https://doi.org/10.1038/s41563-025-02272-0

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# generated using pymatgen
data_Ho10Ga3SiBi4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.62829630
_cell_length_b   8.62829541
_cell_length_c   7.95576379
_cell_angle_alpha   89.35142067
_cell_angle_beta   89.35141724
_cell_angle_gamma   125.17647105
_symmetry_Int_Tables_number   1
_chemical_formula_structural   Ho10Ga3SiBi4
_chemical_formula_sum   'Ho10 Ga3 Si1 Bi4'
_cell_volume   483.97781033
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ho  Ho0  1  0.04416036  0.28947688  0.33295759  1.0
  Ho  Ho1  1  0.95619032  0.71172043  0.66554454  1.0
  Ho  Ho2  1  0.46070737  0.20789299  0.83506112  1.0
  Ho  Ho3  1  0.78920643  0.54031878  0.16515420  1.0
  Ho  Ho4  1  0.54031878  0.78920643  0.16515420  1.0
  Ho  Ho5  1  0.20789299  0.46070737  0.83506112  1.0
  Ho  Ho6  1  0.71172043  0.95619032  0.66554454  1.0
  Ho  Ho7  1  0.28947688  0.04416036  0.33295759  1.0
  Ho  Ho8  1  0.99958349  0.99958349  0.99960731  1.0
  Ho  Ho9  1  0.49932037  0.49932037  0.50032346  1.0
  Ga  Ga10  1  0.37243167  0.37243167  0.12553268  1.0
  Ga  Ga11  1  0.62673980  0.62673980  0.87326250  1.0
  Ga  Ga12  1  0.13758686  0.13758686  0.63639204  1.0
  Si  Si13  1  0.86385345  0.86385345  0.36419042  1.0
  Bi  Bi14  1  0.79153596  0.20491643  0.00149902  1.0
  Bi  Bi15  1  0.20491643  0.79153596  0.00149902  1.0
  Bi  Bi16  1  0.70923778  0.29512062  0.50012833  1.0
  Bi  Bi17  1  0.29512062  0.70923778  0.50012833  1.0
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